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Other articles related with "nonvolatile memory"：
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18503 |
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进) |
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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack |
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Chin. Phys. B
2023 Vol.32 (1): 18503-018503
[Abstract]
(228)
[HTML 0 KB]
[PDF 1005 KB]
(59)
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47701 |
Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威) |
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Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands |
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Chin. Phys. B
2020 Vol.29 (4): 47701-047701
[Abstract]
(560)
[HTML 1 KB]
[PDF 1331 KB]
(117)
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67303 |
Chen Wang(王尘), Yi-Hong Xu(许怡红), Song-Yan Chen(陈松岩), Cheng Li(李成), Jian-Yuan Wang(汪建元), Wei Huang(黄巍), Hong-Kai Lai(赖虹凯), Rong-Rong Guo(郭榕榕) |
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Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer |
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Chin. Phys. B
2018 Vol.27 (6): 67303-067303
[Abstract]
(560)
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[PDF 1779 KB]
(144)
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97304 |
Jie Yu(于杰), Kun-ji Chen(陈坤基), Zhong-yuan Ma(马忠元), Xin-xin Zhang(张鑫鑫), Xiao-fan Jiang(江小帆), Yang-qing Wu(吴仰晴), Xin-fan Huang(黄信凡), Shunri Oda |
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Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices |
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Chin. Phys. B
2016 Vol.25 (9): 97304-097304
[Abstract]
(626)
[HTML 1 KB]
[PDF 1151 KB]
(304)
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116102 |
Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas |
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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction |
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Chin. Phys. B
2015 Vol.24 (11): 116102-116102
[Abstract]
(560)
[HTML 1 KB]
[PDF 547 KB]
(232)
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117308 |
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) |
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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
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Chin. Phys. B
2013 Vol.22 (11): 117308-117308
[Abstract]
(536)
[HTML 1 KB]
[PDF 443 KB]
(435)
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108102 |
Wang Li(王利), Sun Hong-Fang(孙红芳), Zhou Hui-Hua(周惠华), and Zhu Jing(朱静) |
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Preparation of size controllable copper nanocrystals for nonvolatile memory applications |
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Chin. Phys. B
2010 Vol.19 (10): 108102-108102
[Abstract]
(1419)
[HTML 0 KB]
[PDF 3061 KB]
(599)
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1167 |
Liu Bo (刘波), Song Zhi-Tang (宋志棠), Zhang Ting (张挺), Feng Song-Lin (封松林), Gan Fu-Xi (干福熹) |
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Novel material for nonvolatile ovonic unified memory (OUM)－Ag11In12Te26Sb51 phase change semiconductor |
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Chin. Phys. B
2004 Vol.13 (7): 1167-1170
[Abstract]
(851)
[HTML 1 KB]
[PDF 180 KB]
(317)
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